Technical Specification

2N6578 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6578

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 120

Maximum collector-base voltage |Ucb|, V: 125

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 500

Noise Figure, dB: -

Package of 2N6578 transistor: TO3

Mat Struct Pc Ucb Uce Ueb Ic Tj Ft Hfe Caps

1. 2N6578 Si NPN 120 125 120 7 15 200 4 500 TO3

2. 2SC5242 Si NPN 0 0 230 0 15 0 TO3P(N)

3. 2SC5358 Si NPN 0 0 230 0 15 0 TO3P(N)

4. 2SC5359 Si NPN 0 0 230 0 15 0 TO3P(L)

5. 2SC5949 Si NPN 0 200 200 0 15 0 TO3P(L)

6. BDX69C Si NPN 200 140 120 0 25 200 2000 TO3

7. BU323P Si NPN 125 300 200 7 50 200 4 1000 TO3

8. MD1803DFX Si NPN 0 1500 700 0 0 0 TO3PF

9. SMS932 Si NPN 150 0 450 0 20 10 700 TO3

10. SU186 Si NPN 150 0 125 0 15 0 TO3_BE

11. SU187 Si NPN 150 0 200 0 15 0 TO3_BE

12. SU188 Si NPN 150 0 250 0 20 0 TO3_BE

13. SU189 Si NPN 175 0 400 0 15 0 TO3_BE

14. SU190 Si NPN 0 0 450 0 0 0 TO3_BE

15. SU191 Si NPN 0 0 125 0 20 0 TO3_BE

16. SU192 Si NPN 0 0 250 0 15 0 TO3_BE

17. TTC0001 Si NPN 0 160 160 0 18 0 TO3P(N)

18. TTC0002 Si NPN 0 160 160 0 18 0 TO3P(L)

19. TTC5200 Si NPN 0 230 230 0 15 0 TO3P(L)

Data Sheet